Zinc oxide is an important semiconductor, but its use in a wide range of applications is limited by the difficulty in doping p-type. This is believed to be related to the nature of the intrinsic defects, which cause a self-compensation of free carriers. We plan to determine the defect structures in nominally stoichiometric zinc oxide using single-crystal diffuse neutron scattering. Our previous measurements indicate that various defects contribute to the diffuse scattering along with the thermal diffuse scattering. We aim to separate the various contributions via their different temperature dependencies. Hence we propose to study single-crystal zinc oxide mounted in a furnace as a function of temperature using neutron Laue diffraction on SXD.