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Replication Data for: Scalable production of solid-immersion lenses for quant...
Data to replicate the experimental data plots in the paper: Fig. 1d, e: AFM scans of SIL before the etching and after the etching, possibility to see how the mask changed in the... -
Measurement of vibrational spectra in high-thermal-conductivity ceramics
In high-voltage electronics, heat dissipation is a major challenge. Ideally the materials in these devices will have a high thermal conductivity; a property determined by... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Direct spectroscopy of muon donor and acceptor levels in silicon carbide
We will perform direct laser spectroscopy to measure the ionisation energy of muon defect levels in a semiconductor - specifically silicon carbide. We should see a broad... -
Muonium Defect Levels in 4H Silicon Carbide
We propose to obtain the temperature dependence of the diamagnetic spin-precession amplitudes up to 1100 K for the three electrical types of 4H-SiC in order to extract the Mu... -
Surface structures of polycations in confined geometries
A second-generation surface force style apparatus has been developed to probe the inter-surface and near-surface structures under compressive forces. Systems of current academic... -
High and Low Temp Comissioning on PEARL
This dataset has no description
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Spectroscopy of muon centres in n-type silicon carbide
We propose a series of measurements to complete the previous direct spectroscopic measurements of the Muonium defect energy levels in Silicon Carbide (SiC; RB110134). We will... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Spectroscopy of muon centres in n-type silicon carbide
We propose a series of measurements to complete the previous direct spectroscopic measurements of the Muonium defect energy levels in Silicon Carbide (SiC; RB110134). We will...
