The purpose of this experiment is to establish evaluation procedures of TlBr semiconductor radiation detectors. The TlBr has recently been developed as an alternative to the high purity germanium (HPGe) detector. It can be operated under room temperature and shows excellent energy resolution (<1%). The current key issue is how to improve the yield rate of detector production. It takes a long time for crystal purification and growth, but we cannot evaluate the detector quality before completing fabrication processes. If we know what is problem in the fabrication processes, we can drastically improve the yield rate of production. In this experiment, in which the crystal quality will be evaluated by neutron Bragg-edge imaging, we would like to investigate the relation between crystal quality and detector performance. This project will involve developing analysis code for Bragg dip signals.