Diffuse scattering from doped zinc oxide

DOI

Zinc oxide is an important wide band gap semiconductor material used in a diverse range of industrial applications, many of which require both n-type and p-type components. It can easily be doped n-type, but it is difficult to dope p-type. We have measured the structural diffuse scattering and inelastic scattering from as-grown nominally stoichiometric, oxidised and reduced zinc oxide using neutron Laue diffraction on SXD. We now propose to study the defect structures and lattice dynamics of n-type and p-type doped single crystals of zinc oxide. Given our sensitivity to diffuse structural scattering, we expect to shed light on the effect of defect structures on the electrical transport properties. We shall also determine how doping affects the phonon dispersion and thermal transport properties.

Identifier
DOI https://doi.org/10.5286/ISIS.E.86391796
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/86391796
Provenance
Creator Dr Keith Refson; Dr Matthias Gutmann; Mr Tim Lehner; Dr Rob Potter; Dr Dharmalingan Prabhakaran; Mr Chris Nuttall; Dr Uthayakumar Sivaperumal; Professor Jon Goff
Publisher ISIS Neutron and Muon Source
Publication Year 2020
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Natural Sciences; Physics
Temporal Coverage Begin 2017-05-20T09:00:00Z
Temporal Coverage End 2017-05-27T09:00:00Z