Zinc oxide is an important wide band gap semiconductor material used in a diverse range of industrial applications, many of which require both n-type and p-type components. It can easily be doped n-type, but it is difficult to dope p-type. We have measured the structural diffuse scattering and inelastic scattering from as-grown nominally stoichiometric, oxidised and reduced zinc oxide using neutron Laue diffraction on SXD. We now propose to study the defect structures and lattice dynamics of n-type and p-type doped single crystals of zinc oxide. Given our sensitivity to diffuse structural scattering, we expect to shed light on the effect of defect structures on the electrical transport properties. We shall also determine how doping affects the phonon dispersion and thermal transport properties.