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Magnetic Properties of Nano-Size La2CuO4
The grain size dependence of magnetic properties of the mother material of the high-Tc cuprate, La2CuO4 (LCO), is proposed to study by muSR. Although LCO shows an... -
Tuning cycloidal ordering by epitaxial strain in BiFeO3 thin films
Owing to their promising applications, especially in spintronics, multiferroics have been at the fprefront of condensed matter research for a number of years. In these... -
Spatially profiling internal microstructure changes during redox driven rapid...
The redox driven swelling and deswelling of conducting polymers has been termed Electronic Muscle actuation. One application of this property is as a sphincter-like valve in a... -
GISANS from photoconductive hydrogel electrodes.
The sun is an abundant and cheap source of energy, harnessing it as storable fuel has the potential for a large societal impact. Organic photoelectrodes (PEs) formed from low... -
MuSR study on optically injected electronic spin in GaAs
In the field of semiconductor spintronics, n-type GaAs has been utilized as a prototype system, where one can inject electronic spin and study its behavior with optical... -
Probing the magnetic interface in Bi2Se3/CoFeB bilayers by polarized neutron ...
Topological insulators (TIs) are quantum materials having insulating properties in bulk, but display gapless conducting surface states. These conducting surface electronic... -
Auger recombination in low temperature silicon measured by photo-MuSR technique
We measure electron-hole recombination rate in low-temperature pure silicon using the photo-MuSR technique. The previous works have measured the recombination rate down to -30... -
Copy of: Copy of: Dynammical studies of hydrogen sorption on pure and Pd coat...
Zinc Oxide (ZnO) is a wide band gap semiconductor that has a number of interesting applications especially its optoelectronic (blue and near UV light emitting properties, as a... -
Study of the modified magnetization resulting from interfacial electronic rec...
Multiferroics are promising candidates for faster and cooler electronics. Due to the intrinsic incompatibility between the ferromagnetic (FM) and ferroelectric (FE) phases, it... -
A new approach to look at membrane in plane organisation via giSANS
Biological membrane in plane organisation is a challenging topic, specially since it has been suggested to depend on curvature. So far the main approach to study curvature... -
Auger recombination in low temperature silicon measured by photo-MuSR technique
We measure electron-hole recombination rate in low-temperature pure silicon using the photo-MuSR technique. The previous works have measured the recombination rate down to -30... -
Effect of oxidation on lipid raft formation: a SANS study
The separation of particular lipids in cell membranes into liquid ordered and liquid disorder regions is thought to have a major influence of the functioning of membrane... -
Can photo-MuSR method measure carrier recombination lifetime in direct gap se...
In the past years we have developed a method measuring carrier recombination lifetime in semiconductors using the photo-MuSR setup in HIFI. These studies have focused on... -
Muonium-photocarrier interaction in germanium
Having established the photo-MuSR method in intrinsic silicon to investigate excess carrier recombination lifetime and Mu-photocarrier dynamics in our previous experiments, we... -
Spin-Echo Commissioning
This dataset has no description
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Effects of IR Illumination on Mu Dynamics and Mu0 Formation in TiO2
We propose a study of Mu dynamics and the low temperature Mu$^0$-like states in TiO$_{2}$ under near-IR illumination to investigate the resulting excitonic states and behaviour.... -
Muon Spin Relaxation studies of quantum critical spin fluctuations in CeCo1-x...
Recently, we have studied new doped alloys CeCo1-xNixIn5 for the first time. The substitution of Ni for Co simply suppresses the superconducting phase without generating... -
Basic Science for Offpsec : Part 2
This proposal is part 2 of a set of two proposals on Offspec aimed at understanding some of the effects seen in off-specular data and in particular the use of the spin echo... -
Soft errors caused by muons and neutrons at 20 nm technology node
Soft errors are expected to be the most dominant failure mechanism at 20 nm technology node. With the low critical charge requirements for an upset (~ 0.1 fC), SRAM cells and... -
Muon Spin Relaxation detection of Spin-Polarized Conduction Electrons in Silicon
The proposed experiment is to observe optical spin-injection in Silicon through MuSR detection. An important part of research in next generation electronics focusses on the...
