Having established the photo-MuSR method in intrinsic silicon to investigate excess carrier recombination lifetime and Mu-photocarrier dynamics in our previous experiments, we now apply the techniques to another semiconductor material, germanium. Although previous experiments observed large photo-induced MuSR signal in Ge, there are still unknown microscopic mechanisms especially in dynamics between different Mu states upon photocarrier injection. We investigate the dynamics by studying its dependence on the excess carrier density. We also measure the carrier lifetime in Ge, an essential parameter for the microscopic dynamics. Making another successful example in our lifetime spectroscopy technique is important for stronger appeal to semiconductor community.