Data: Fully encapsulated and stable black phosphorus field-effect transistors

DOI

Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.

Identifier
DOI https://doi.org/10.14278/rodare.1552
Related Identifier Cites https://doi.org/10.17815/jlsrf-3-159
Related Identifier IsReferencedBy https://www.hzdr.de/publications/Publ-34502
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Related Identifier IsPartOf https://doi.org/10.14278/rodare.1551
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Metadata Access https://rodare.hzdr.de/oai2d?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:rodare.hzdr.de:1552
Provenance
Creator Arora, Himani ORCID logo; Fekri, Zahra ORCID logo; Vekariya, Yagnika Nandlal; Chava, Phanish ORCID logo; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur ORCID logo
Publisher Rodare
Publication Year 2022
Rights Creative Commons Attribution 4.0 International; Open Access; https://creativecommons.org/licenses/by/4.0/legalcode; info:eu-repo/semantics/openAccess
OpenAccess true
Contact https://rodare.hzdr.de/support
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Resource Type Dataset
Discipline Life Sciences; Natural Sciences; Engineering Sciences