Interface effects are attracting a renewed interest in recent years. It resides in the fact that when an interface is formed the break of symmetry gives rise to entirely new physical properties. Tailoring these properties at the interface between graphene and a strongly correlated oxide has a tremendous technological implication in spintronics. For spin transport devices based on such interface effects as the proximity effect induced magnetism in graphene, EuO is a promising candidate to use due to a very high magnetic moment of 7 uB per Eu atom and its insulating properties.