We propose RF-MuSR experiments focused on confirming the two shallow Mu donor states tentatively observed in single crystalline beta-Ga2O3 samples. This material is a candidate for more widespread technological applications than its more traditional TCO counterparts, since it shows p-type behaviour when appropriately doped. An understanding of the source of its natural n-type conductivity is crucial to maximize the performance of devices based on this material. Our ZF and TF MuSR experiments indicate the existence of two neutral shallow muonium states in Ga2O3, suggesting that H might be a source of electrons. Results from TRIUMF provide preliminary HF constants and show ionization steps in diamagnetic amplitude. We seek to more accurately determine the ionization energies and obtain HF spectra by RF-MuSR methods.