Colossal magnetoresistance (CMR) is observed in the oxypnictide NdMnAsO1-xFx (x = 0 - 0.085) at low temperature. The CMR in NdMnAsO1-xFx arises due to competition between a strongly correlated antiferromagnetic insulating phase and a paramagnetic semiconductor with field. Another way to induce transitions between competing phases is to apply external pressure. Preliminary variable pressure data show a notable change in the temperature variation of the resistivity of NdMnAsO0.95F0.05 upon applying a pressure of up to 2.56 GPa. Given that the electronic and magnetic properties of NdMnAsO0.95F0.05 are strongly coupled it is highly likely that this change in resistivity is a result of a change in magnetic structure upon applying pressure. We aim to investigate the magnetic structure of NdMnAsO0.95F0.05 at temperatures between 20 K and 60 K in pressures up to 6 GPa.