We propose longitudinal muon spin depolarization measurements for two additional samples of Si(1-x)Ge(x) alloys in order to complete our study of the dependence of Mu(-/0) acceptor level energies on alloy composition and the T-site configuration. A sample with x=0.87 will help better determine where the T(Si2Ge2) related level crosses the valence band edge, implying that a negatively charge Mu ion will serve as the core for a shallow Mu acceptor state. We have already shown that the acceptor levels for T(Ge4) and T(Si1Ge3) are valence-band resonant above x=0.92 and x=0.80, respectively. The current data suggest the the T(Si2Ge2) level enters the band near x=0.86, thus the level for x=0.87 should lie just below the band edge. A sample with x=0.55 is important for confirmation of data suggesting that an alloy bowing parameter is needed to slightly lower the mid-range band edge.